Activation barrier of vacavcy migration in Fcc-Zn
Posted: Tue Mar 30, 2010 3:10 am
Dear Sir,
I have utilized NEB to investigate the activation barrier of vacavcy(single) migration in Fcc-Zn(we all know that the stable configuration of Zn is Hcp_A3), a problem occurs: when I use different nodes and cpus, I get different activation barrier of vacavcy migration, sometimes it could be 0.461199eV, and sometimes it is 0.423174eV. I think it is a large difference, so what is the reason? (I have calculated the phonon dispersion of FCC-Zn, and find this configuration is mechanically stable).
Looking forward to your reply and suggestions! Many thanks!
I have utilized NEB to investigate the activation barrier of vacavcy(single) migration in Fcc-Zn(we all know that the stable configuration of Zn is Hcp_A3), a problem occurs: when I use different nodes and cpus, I get different activation barrier of vacavcy migration, sometimes it could be 0.461199eV, and sometimes it is 0.423174eV. I think it is a large difference, so what is the reason? (I have calculated the phonon dispersion of FCC-Zn, and find this configuration is mechanically stable).
Looking forward to your reply and suggestions! Many thanks!